NXP Semiconductors
Product data sheet
NPN general purpose transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector cut-off current
emitter cut-off current
DC current gain
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
C
= 0; V
EB
= 5 V
V
CE
= 1 V; note 1; (see Fig.2)
I
C
= 0.1 mA
I
C
= 1 mA
I
C
= 10 mA
I
C
= 50 mA
I
C
= 100 mA
V
CEsat
V
BEsat
C
c
C
e
f
T
F
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
C
= 10 mA; I
B
= 1 mA
I
C
= 50 mA; I
B
= 5 mA
I
E
= i
e
= 0; V
CB
= 5 V; f = 1 MHz
I
C
= i
c
= 0; V
EB
= 0.5 V; f = 1 MHz
I
C
= 100
µA;
V
CE
= 5 V; R
S
= 1 kΩ;
f = 10 Hz to 15.7 kHz
40
70
100
60
30
−
−
650
−
−
−
−
−
−
MIN.
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
VALUE
500
PMBS3904
UNIT
K/W
MAX.
50
50
−
−
300
−
−
200
300
850
950
4
12
−
5
UNIT
nA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
I
C
= 10 mA; V
CE
= 20 V; f = 100 MHz 180
Switching times (between 10% and 90% levels);
t
on
t
d
t
r
t
off
t
s
t
f
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
turn-on time
delay time
rise time
turn-off time
storage time
fall time
I
Con
= 10 mA; I
Bon
= 1 mA;
I
Boff
=
−
1 mA; V
CC
= 3 V;
V
BB
=
−1.9
V
−
−
−
−
−
−
110
50
60
1 200
1 000
200
ns
ns
ns
ns
ns
ns
2004 Feb 02
3
PHILIPS [ NXP SEMICONDUCTORS ]
