NXP Semiconductors
Product data sheet
NPN high-voltage transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th(j-a)
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
PARAMETER
collector-base cut-off current
MPSA42
MPSA43
I
EBO
emitter-base cut-off current
MPSA42
MPSA43
h
FE
DC current gain
V
EB
= 6 V; I
C
= 0 A
V
EB
= 4 V; I
C
= 0 A
V
CE
= 10 V; note 1
I
C
= 1 mA
I
C
= 10 mA
I
C
= 30 mA
V
CEsat
V
BEsat
C
c
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
MPSA42
MPSA43
f
T
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
transition frequency
V
CE
= 20 V; I
C
= 10 mA; f = 100 MHz
I
C
= 20 mA; I
B
= 2 mA; note 1
I
C
= 20 mA; I
B
= 2 mA; note 1
V
CB
= 20 V; I
E
= i
e
= 0 A; f = 1 MHz
V
CB
= 200 V; I
E
= 0 A
V
CB
= 160 V; I
E
= 0 A
CONDITIONS
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
MPSA42; MPSA43
VALUE
250
UNIT
K/W
MIN.
−
−
−
−
25
40
40
−
−
−
−
50
MAX.
100
100
100
100
−
−
−
500
900
3
4
−
UNIT
nA
nA
nA
nA
mV
mV
pF
pF
MHz
2004 Oct 11
3
PHILIPS [ NXP SEMICONDUCTORS ]
