Philips Semiconductors
Product specification
Quadruple exclusive-OR gate
AC CHARACTERISTICS
V
SS
= 0 V; T
amb
= 25
°C;
C
L
= 50 pF; input transition times
≤
20 ns
V
DD
V
Propagation delays
I
n
→
O
n
HIGH to LOW
5
10
15
5
LOW to HIGH
Output transition times
HIGH to LOW
10
15
5
10
15
5
LOW to HIGH
10
15
t
TLH
t
THL
t
PLH
t
PHL
85
35
30
75
30
25
60
30
20
60
30
20
175
75
55
150
65
50
120
60
40
120
60
40
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
58 ns
24 ns
21 ns
48 ns
19 ns
17 ns
10 ns
9 ns
6 ns
10 ns
9 ns
6 ns
+
+
+
+
+
+
+
+
+
+
+
+
SYMBOL
TYP.
MAX.
HEF4070B
gates
TYPICAL EXTRAPOLATION
FORMULA
(0,55 ns/pF) C
L
(0,23 ns/pF) C
L
(0,16 ns/pF) C
L
(0,55 ns/pF) C
L
(0,23 ns/pF) C
L
(0,16 ns/pF) C
L
(1,0 ns/pF) C
L
(0,42 ns/pF) C
L
(0,28 ns/pF) C
L
(1,0 ns/pF) C
L
(0,42 ns/pF) C
L
(0,28 ns/pF) C
L
V
DD
V
Dynamic power
dissipation per
package (P)
5
10
15
TYPICAL FORMULA FOR P (µW)
1100 f
i
+ ∑
(f
o
C
L
)
×
V
DD2
4900 f
i
+ ∑
(f
o
C
L
)
×
V
DD2
14 400 f
i
+ ∑
(f
o
C
L
)
×
V
DD2
where
f
i
= input freq. (MHz)
f
o
= output freq. (MHz)
C
L
= load capacitance (pF)
∑
(f
o
C
L
) = sum of outputs
V
DD
= supply voltage (V)
January 1995
3
PHILIPS [ NXP SEMICONDUCTORS ]
