NXP Semiconductors
BSS84
P-channel enhancement mode vertical DMOS transistor
7. Characteristics
Table 7.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol
V
(BR)DSS
V
GS(th)
Parameter
Conditions
Min
−50
Typ
-
Max
-
Unit
V
Static characteristics
drain-source breakdown I
D
=
−10 µA;
V
GS
= 0 V
voltage
gate-source threshold
voltage
I
D
=
−1
mA; V
DS
= V
GS
;
see
T
j
= 25
°C
T
j
=
−55 °C
I
DSS
drain leakage current
V
DS
=
−40
V; V
GS
= 0 V
T
j
= 25
°C
V
DS
=
−50
V; V
GS
= 0 V
T
j
= 25
°C
T
j
= 125
°C
I
GSS
R
DSon
gate leakage current
drain-source on-state
resistance
V
GS
= +20 V; V
DS
= 0 V
V
GS
=
−20
V; V
DS
= 0 V
V
GS
=
−10
V;
I
D
=
−130
mA;
see
and
V
DS
=
−25
V;
I
D
=
−130
mA
V
GS
= 0 V; V
DS
=
−25
V;
f = 1 MHz; see
-
-
-
-
-
-
-
-
-
6
−10
−60
100
100
10
µA
µA
nA
nA
Ω
-
-
−100
nA
−0.8
-
-
-
−2
−1.8
V
V
Dynamic characteristics
|Y
fs
|
C
iss
C
oss
C
rss
t
on
transfer admittance
input capacitance
output capacitance
reverse transfer
capacitance
turn-on time
V
DS
=
−40
V; V
GS
= 0 V
to
−10
V; I
D
=
−200
mA;
see
and
V
DS
=
−40
V;
V
GS
=
−10
V to 0 V;
I
D
=
−200
mA;
see
and
50
-
-
-
-
-
25
15
3.5
3
-
45
25
12
-
mS
pF
pF
pF
ns
t
off
turn-off time
-
7
-
ns
BSS84_6
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 06 — 16 December 2008
5 of 11
PHILIPS [ NXP SEMICONDUCTORS ]
