BGU6005/N2
NXP Semiconductors
Low Noise Amplifier MMIC for GPS, GLONASS, Galileo and Compass
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min Max Unit
VCC
supply voltage
RF input AC coupled
VI(ENABLE) < VCC + 0.6
DC; VI(RF_IN) < VCC + 0.6
DC; VI(RF_OUT) < VCC + 0.6
0.5 +5.0
0.5 +5.0
0.5 +5.0
0.5 +5.0
V
[1]
[1][2]
[1][2]
VI(ENABLE) input voltage on pin ENABLE
VI(RF_IN) input voltage on pin RF_IN
VI(RF_OUT) input voltage on pin RF_OUT
V
V
V
Pi
input power
-
-
10
55
dBm
mW
[3]
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
electrostatic discharge voltage
Tsp 130 C
65 +150 C
-
-
150
C
VESD
Human Body Model (HBM) According to
ANSI/ESDA/JEDEC standard JS-001
4
kV
Charged Device Model (CDM) According to
JEDEC standard JESD22-C101
-
1
kV
[1] Warning: due to internal ESD diode protection, the applied DC voltage should not exceed VCC + 0.6 and shall not exceed 5.0 V in order
to avoid excess current.
[2] The RF input and RF output are AC coupled through internal DC blocking capacitor.
[3] Tsp is the temperature at the soldering point of the emitter lead.
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Typ
Unit
Rth(j-sp)
thermal resistance from junction to solder point
225
K/W
7. Characteristics
Table 7.
Characteristics at VCC = 1.8 V
f = 1559 MHz to 1610 MHz; VCC = 1.8 V; VI(ENABLE) 0.9 V; Pi < 40 dBm; Tamb = 25 C; input
matched to 50 using a 5.6 nH inductor; unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
VCC
ICC
supply voltage
supply current
RF input AC coupled
VI(ENABLE) 0.9 V
VI(ENABLE) 0.3 V
no jammer
-
-
-
-
-
-
-
-
-
-
1.8
5.2
-
-
-
2
-
-
-
-
V
mA
A
dB
Gp
power gain
17
8
RLin
RLout
ISL
input return loss
output return loss
isolation
dB
14
24
dB
dB
[1]
[2]
NF
noise figure
no jammer
0.85 -
dB
Pi(1dB)
IP3i
input power at 1 dB gain compression f = 1575 MHz
input third-order intercept point f = 1575 MHz
9
-
-
dBm
dBm
3
BGU6005_N2
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2017. All rights reserved.
Preliminary data sheet
Rev. 2 — 31 January 2017
3 of 10
NXP [ NXP ]
