NXP Semiconductors
Product data sheet
NPN medium power transistor;
20 V, 1 A
BCP68
2.4
handbook, halfpage
IC
(A)
2.0
MDB848
handbook, halfpage
(1)
(2)
(3)
1000
MDB849
VBE
(mV)
800
1.6
(4)
(5)
600
1.2
(6)
(7)
400
0.8
(8)
(9)
0.4
200
(10)
0
0
1
2
3
4
5
VCE (V)
0
10
−1
1
10
10
2
10
3
10
4
IC (mA)
T
amb
= 25
°C.
(1) I
B
= 10 mA.
(2) I
B
= 9 mA.
(3) I
B
= 8 mA.
(4) I
B
= 7 mA.
(5) I
B
= 6 mA.
(6) I
B
= 5 mA.
(7) I
B
= 4 mA.
(8) I
B
= 3 mA.
(9) I
B
= 2 mA.
(10) I
B
= 1 mA.
V
BE
/V
CE
= 1 V.
Fig.4
Collector current as a function of
collector-emitter voltage; typical values.
Fig.5
Base-emitter voltage as a function of
collector current; typical values.
2003 Nov 25
7