BC847/BC547 series
NXP Semiconductors
45 V, 100 mA NPN general-purpose transistors
mgt727
mgt728
600
1200
V
BE
h
FE
(mV)
1000
(1)
(2)
500
(1)
(2)
400
300
200
100
0
800
600
400
200
0
(3)
(3)
−2
−1
2
3
−1
2
3
10
10
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 5. Selection B: DC current gain as a function of
collector current; typical values
Fig 6. Selection B: Base-emitter voltage as a
function of collector current; typical values
mgt729
mgt730
4
10
1200
V
BEsat
(mV)
1000
V
CEsat
(mV)
(1)
(2)
3
10
800
600
400
200
0
(3)
2
10
(1)
(3) (2)
10
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
IC/IB = 10
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 150 °C
Fig 7. Selection B: Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 8. Selection B: Base-emitter saturation voltage
as a function of collector current; typical
values
BC847_BC547_SER_7
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 07 — 10 December 2008
8 of 15
NXP [ NXP ]
