BL
Galaxy Electrical
NPN
general purpose Transistor
Production specification
BC847AT/BT/CT
ELECTRICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
DC current gain
Symbol Test conditions
V
(BR)CBO
I
C
=10μA,I
E
=0
V
(BR)CEO
I
C
=10mA,I
B
=0
B
MIN TYP MAX
50
45
6
0.1
110
200
420
220
450
800
0.25
0.6
0.7
0.9
100
4.5
10
4
UNIT
V
V
V
μA
V
(BR)EBO
I
E
=1μA,I
C
=0
I
CBO
BC847AT
BC847BT h
FE
BC847CT
V
CE(sat)
V
BE(sat)
V
CB
=30V,I
E
=0
V
CE
=5V,I
C
=2mA
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
B
B
Collector-emitter saturation voltage
Base-emitter saturation voltage
V
V
I
C
=10mA, I
B
=0.5mA
I
C
=100mA, I
B
=5mA
B
B
Transition frequency
Collector output capacitance
Noise figure
f
T
C
ob
NF
V
CE
=5V,
I
C
=10mA,f=100KHz
V
CE
=5V,f=1KHz
V
CE
=5V,f=1KHz
R
S
=2KΩ,BW=200Hz
MHz
Pf
dB
TYPICAL CHARACTERISTICS
@ Ta=25℃ unless otherwise specified
Document number: BL/SSSTH001
Rev.A
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PHILIPS [ NXP SEMICONDUCTORS ]
