NXP Semiconductors
BAV23 series
Dual high-voltage switching diodes
1.0
C
d
(pF)
0.8
mbg447
300
I
F
(mA)
200
006aab214
(1)
0.6
(2)
100
0.4
0.2
0
2
4
6
V
R
(V)
8
0
0
50
100
150
200
T
amb
(°C)
f = 1 MHz; T
amb
= 25
C
FR4 PCB, standard footprint
(1) Single diode loaded.
(2) Double diode loaded.
Fig 4.
Diode capacitance as a function of reverse
voltage; typical values
Fig 5.
Forward current as a function of ambient
temperature; derating curves
8. Test information
t
r
D.U.T.
R
S
= 50
Ω
V = V
R
+
I
F
×
R
S
I
F
SAMPLING
OSCILLOSCOPE
R
i
= 50
Ω
V
R
mga881
t
p
t
10 %
+
I
F
trr
t
90 %
input signal
output signal
(1)
(1) I
R
= 1 mA
Fig 6.
Reverse recovery time test circuit and waveforms
BAV23_SER_7
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Product data sheet
Rev. 07 — 19 March 2010
6 of 13
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