BAV23 series
Dual high-voltage switching diodes
Rev. 07 — 19 March 2010
Product data sheet
1. Product profile
1.1 General description
Dual high-voltage switching diodes, encapsulated in small Surface-Mounted
Device (SMD) plastic packages.
Table 1.
Product overview
Package
NXP
BAV23A
BAV23C
BAV23S
BAV23
SOT23
SOT23
SOT23
SOT143B
JEDEC
TO-236AB
TO-236AB
TO-236AB
-
dual common anode
dual common cathode
dual series
dual isolated
Configuration
Type number
1.2 Features and benefits
High switching speed: t
rr
50 ns
Low leakage current
Repetitive peak reverse voltage:
V
RRM
250 V
Low capacitance: C
d
2 pF
Small SMD plastic package
1.3 Applications
High-speed switching at high voltage
High-voltage general-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
R
V
R
t
rr
[1]
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
Conditions
V
R
= 200 V
Min
-
-
-
Typ
-
-
-
Max
100
200
50
Unit
nA
V
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA.
PHILIPS [ NXP SEMICONDUCTORS ]
