Philips Semiconductors
Product specification
Schottky barrier (double) diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
I
FRM
I
FSM
T
stg
T
j
Per device
P
tot
total power dissipation
T
amb
≤
25
°C
−
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
junction temperature
t
p
≤
1 s;
δ ≤
0.5
t
p
< 10 ms
−
−
−
−
PARAMETER
CONDITIONS
BAT54 series
MIN.
MAX.
UNIT
30
200
300
600
+150
125
V
mA
mA
mA
°C
°C
mW
−65
−
230
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SOT23 standard mounting conditions.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 10 mA
I
F
= 30 mA
I
F
= 100 mA
I
R
t
rr
reverse current
reverse recovery time
V
R
= 25 V; see Fig.4
when switched from I
F
= 10 mA
to I
R
= 10 mA; R
L
= 100
Ω;
measured at I
R
= 1 mA;
see Fig.6
f = 1 MHz; V
R
= 1 V; see Fig.5
240
320
400
500
800
2
5
mV
mV
mV
mV
mV
µA
ns
PARAMETER
CONDITIONS
MAX.
UNIT
PARAMETER
thermal resistance from junction to
ambient
note 1
CONDITIONS
VALUE
500
UNIT
K/W
C
d
diode capacitance
10
pF
2002 Mar 04
3
PHILIPS [ NXP SEMICONDUCTORS ]
