NXP Semiconductors
74HC02; 74HCT02
Quad 2-input NOR gate
Table 6.
Static characteristics
…continued
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HCT02
V
IH
V
IL
V
OH
HIGH-level
input voltage
LOW-level
input voltage
HIGH-level
output voltage
V
CC
= 4.5 V to 5.5 V
V
CC
= 4.5 V to 5.5 V
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
=
−20 µA
I
O
=
−4.0
mA
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
; V
CC
= 4.5 V
I
O
= 20
µA;
V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
∆I
CC
input leakage
current
supply current
additional
supply current
V
I
= V
CC
or GND;
V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
per input pin;
V
I
= V
CC
−
2.1 V; I
O
= 0 A;
other inputs at V
CC
or GND;
V
CC
= 4.5 V to 5.5 V
-
-
-
-
-
0
0.15
-
-
150
0.1
0.26
±0.1
2.0
540
-
-
-
-
-
0.1
0.33
±1
20
675
-
-
-
-
-
0.1
0.4
±1
40
735
V
V
µA
µA
µA
4.4
3.98
4.5
4.32
-
-
4.4
3.84
-
-
4.4
3.7
-
-
V
V
2.0
-
1.6
1.2
-
0.8
2.0
-
-
0.8
2.0
-
-
0.8
V
V
Conditions
Min
25
°C
Typ
Max
−40 °C
to +85
°C −40 °C
to +125
°C
Unit
Min
Max
Min
Max
C
I
input
capacitance
-
3.5
-
-
-
-
-
pF
10. Dynamic characteristics
Table 7.
Dynamic characteristics
GND = 0 V;
C
L
= 50 pF;
for load circuit see
Symbol Parameter
Conditions
Min
74HC02
t
pd
propagation delay nA, nB to nY; see
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 5.0 V; C
L
= 15 pF
V
CC
= 6.0 V
t
t
transition time
see
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
C
PD
power dissipation
capacitance
per package; V
I
= GND to V
CC
25
°C
Typ
Max
−40 °C
to +125
°C
Unit
Max
(85
°C)
Max
(125
°C)
-
-
-
-
-
-
-
-
25
9
7
7
19
7
6
22
90
18
-
15
75
15
13
-
115
23
-
20
95
19
16
-
135
27
-
23
110
22
19
-
ns
ns
ns
ns
ns
ns
ns
pF
74HC_HCT02_3
© NXP B.V. 2008. All rights reserved.
Product data sheet
Rev. 03 — 18 September 2008
5 of 15
PHILIPS [ NXP SEMICONDUCTORS ]
