NXP Semiconductors
74HC00; 74HCT00
Quad 2-input NAND gate
Table 5.
Recommended operating conditions
…continued
Voltages are referenced to GND (ground = 0 V)
…continued
Symbol Parameter
Δt/ΔV
input transition rise and fall rate
Conditions
Min
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
-
-
-
74HC00
Typ
-
1.67
-
Max
625
139
83
Min
-
-
-
74HCT00
Typ
-
1.67
-
Max
-
139
-
ns/V
ns/V
ns/V
Unit
9. Static characteristics
Table 6.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V).
Symbol Parameter
74HC00
V
IH
HIGH-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
IL
LOW-level
input voltage
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
OH
HIGH-level
output voltage
V
I
= V
IH
or V
IL
I
O
=
−20 μA;
V
CC
= 2.0 V
I
O
=
−20 μA;
V
CC
= 4.5 V
I
O
=
−20 μA;
V
CC
= 6.0 V
I
O
=
−4.0
mA; V
CC
= 4.5 V
I
O
=
−5.2
mA; V
CC
= 6.0 V
V
OL
LOW-level
output voltage
V
I
= V
IH
or V
IL
I
O
= 20
μA;
V
CC
= 2.0 V
I
O
= 20
μA;
V
CC
= 4.5 V
I
O
= 20
μA;
V
CC
= 6.0 V
I
O
= 4.0 mA; V
CC
= 4.5 V
I
O
= 5.2 mA; V
CC
= 6.0 V
I
I
I
CC
C
I
input leakage
current
supply current
input
capacitance
V
I
= V
CC
or GND;
V
CC
= 6.0 V
V
I
= V
CC
or GND; I
O
= 0 A;
V
CC
= 6.0 V
-
-
-
-
-
-
-
-
0
0
0
0.15
0.16
-
-
3.5
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.33
0.33
±1
20
-
-
-
-
-
-
-
-
-
0.1
0.1
0.1
0.4
0.4
±1
40
-
V
V
V
V
V
μA
μA
pF
-
-
-
-
-
2.0
4.5
6.0
4.32
5.81
-
-
-
-
-
1.9
4.4
5.9
3.84
5.34
-
-
-
-
-
1.9
4.4
5.9
3.7
5.2
-
-
-
-
-
V
V
V
V
V
-
-
-
-
-
-
1.2
2.4
3.2
0.8
2.1
2.8
-
-
-
-
-
-
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
1.5
3.15
4.2
-
-
-
-
-
-
0.5
1.35
1.8
V
V
V
V
V
V
Conditions
Min
25
°C
Typ
Max
−40 °C
to +85
°C −40 °C
to +125
°C
Unit
Min
Max
Min
Max
74HC_HCT00_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 11 January 2010
4 of 15
PHILIPS [ NXP SEMICONDUCTORS ]
