Philips Semiconductors
Product specification
Quad bilateral switches
74HC4066; 74HCT4066
RECOMMENDED OPERATING CONDITIONS
74HC4066
SYMBOL
V
CC
V
I
V
S
T
amb
PARAMETER
supply voltage
input voltage
switch voltage
ambient temperature
see DC and AC
characteristics
per device
V
CC
= 2.0 V
V
CC
= 4.5 V
V
CC
= 6.0 V
V
CC
= 10.0 V
CONDITIONS
MIN.
2.0
GND
GND
−40
−40
−
−
−
−
TYP.
5.0
−
−
+25
−
6.0
−
−
−
MAX.
10.0
V
CC
V
CC
+85
+125
1000
500
400
250
MIN.
4.5
GND
GND
−40
−40
−
−
−
−
TYP.
5.0
−
−
+25
−
6.0
−
−
−
MAX.
5.5
V
CC
V
CC
+85
+125
500
−
−
−
V
V
V
°C
°C
ns
ns
ns
ns
74HCT4066
UNIT
t
r
, t
f
input rise and fall times
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
SYMBOL
V
CC
I
IK
I
SK
I
S
I
CC
, I
GND
T
stg
P
tot
P
S
Notes
1. To avoid drawing V
CC
current out of pin nZ, when switch current flows in pin nY, the voltage drop across the
bidirectional switch must not exceed 0.4 V. If the switch current flows into pin nZ, no V
CC
current will flow out of
pin nY. In this case there is no limit for the voltage drop across the switch, but the voltages at pins nY and nZ may
not exceed V
CC
or GND.
2. For DIP14 packages: above 70
°C
derate linearly with 12 mW/K.
For SO14 packages: above 70
°C
derate linearly with 8 mW/K.
For SSOP14 and TSSOP16 packages: above 60
°C
derate linearly with 5.5 mW/K.
For DHVQFN14 packages: above 60
°C
derate linearly with 4.5 mW/K.
PARAMETER
supply voltage
input diode current
switch diode current
switch current
V
CC
or GND current
storage temperature
power dissipation
power dissipation per switch
T
amb
=
−40 °C
to +125
°C;
note 2
V
I
<
−0.5
V or V
I
> V
CC
+ 0.5 V
V
S
<
−0.5
V or V
S
> V
CC
+ 0.5 V
−0.5
V < V
O
< V
CC
+ 0.5 V; note 1
CONDITIONS
MIN.
−0.5
−
−
−
−
−65
−
−
MAX.
+11.0
±20
±20
±25
±50
+150
500
100
UNIT
V
mA
mA
mA
mA
°C
mW
mW
2004 Nov 11
6
PHILIPS [ NXP SEMICONDUCTORS ]
