Philips Semiconductors
Product specification
Schottky barrier diode
ELECTRICAL CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
C
d
Note
1. Pulse test: t
p
= 300
µs; δ
= 0.02.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Refer to SC-74 (SOT457) standard mounting conditions.
PARAMETER
thermal resistance from junction to ambient
note 1
CONDITIONS
PARAMETER
forward voltage
reverse current
diode capacitance
I
F
= 1 A
V
R
= 20 V; note 1; see Fig.3
V
R
= 25 V; note 1; see Fig.3
f = 1 MHz; V
R
= 4 V; see Fig.4
CONDITIONS
I
F
= 100 mA
1PS74SB23
TYP.
260
400
80
−
100
MAX.
300
450
500
1
−
UNIT
mV
mV
µA
mA
pF
VALUE
250
UNIT
K/W
2003 Aug 04
3
PHILIPS [ NXP SEMICONDUCTORS ]
