NXP Semiconductors
1PS66SB82; 1PS88SB82
15 V, 30 mA low C
d
Schottky barrier diodes
2. Pinning information
Table 3.
Pin
1
2
3
4
5
6
Pinning
Description
anode (diode 1)
anode (diode 2)
anode (diode 3)
cathode (diode 3)
1
2
3
sym046
Simplified outline
6
5
4
Symbol
6
5
4
cathode (diode 2)
cathode (diode 1)
1
2
3
001aab555
3. Ordering information
Table 4.
Ordering information
Package
Name
1PS66SB82
1PS88SB82
-
SC-88
Description
plastic surface mounted package; 6 leads
plastic surface mounted package; 6 leads
Version
SOT666
SOT363
Type number
4. Marking
Table 5.
Marking codes
Marking code
N5
E1*
Type number
1PS66SB82
1PS88SB82
[1]
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
R
I
F
T
j
T
amb
T
stg
continuous reverse voltage
continuous forward current
junction temperature
ambient temperature
storage temperature
Conditions
Min
-
-
-
−65
−65
Max
15
30
125
+125
+150
Unit
V
mA
°C
°C
°C
1PS66SB82_1PS88SB82_4
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 04 — 13 January 2010
2 of 10
PHILIPS [ NXP SEMICONDUCTORS ]
