1996 Apr 26
3
Philips Semiconductors
Per type
T
j
= 25
°C;
unless otherwise specified.
WORKING
VOLTAGE
V
Z
(V)
(1)
at I
Ztest
NOM.
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
1N4737A
1N4738A
1N4739A
1N4740A
1N4741A
1N4742A
1N4743A
1N4744A
1N4745A
1N4746A
1N4747A
1N4748A
1N4749A
Notes
1. V
Z
is measured with device at thermal equilibrium while held in clips at 10 mm from body in still air at 25
°C.
2. Half square wave or equivalent sinewave pulse
1
⁄
120
second duration superimposed on I
Ztest
.
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
76
69
64
58
53
49
45
41
37
34
31
28
25
23
21
19
17
15.5
14
12.5
11.5
10.5
TEST CURRENT
I
Ztest
(mA)
DIFFERENTIAL
RESISTANCE
r
dif
(Ω)
at I
Ztest
MAX.
10
10
9
9
8
7
5
2
3.5
4
4.5
5
7
8
9
10
14
16
20
22
23
25
r
dif
(Ω)
at I
Z
MAX.
400
400
400
400
500
550
600
700
700
700
700
700
700
700
700
700
700
700
750
750
750
750
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
I
Z
(mA)
REVERSE CURRENT
at REVERSE VOLTAGE
I
R
(µA)
MAX.
100
100
50
10
10
10
10
10
10
10
10
10
10
5
5
5
5
5
5
5
5
5
1
1
1
1
1
1
2
3
4
5
6
7
7.6
8.4
9.1
9.9
11.4
12.2
13.7
15.2
16.7
18.2
WORKING
CURRENT
I
ZM
(mA)
NON-REPETITIVE
PEAK REVERSE
CURRENT
I
ZSM
(mA)
(2)
MAX.
1380
1260
1190
1070
970
890
810
730
660
605
550
500
454
414
380
344
304
285
250
225
205
190
Voltage regulator diodes
TYPE No.
V
R
(V)
MAX.
276
252
234
217
193
178
162
146
133
121
110
100
91
83
76
69
61
57
50
45
41
38
1N4728A to 1N4749A
Product specification
PHILIPS [ NXP SEMICONDUCTORS ]
