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1N4737AAMO 参数 Datasheet PDF下载

1N4737AAMO图片预览
型号: 1N4737AAMO
PDF下载: 下载PDF文件 查看货源
内容描述: [DIODE 7.5 V, 1 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, Voltage Regulator Diode]
分类和应用: 稳压二极管测试
文件页数/大小: 6 页 / 31 K
品牌: NXP [ NXP ]
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Philips Semiconductors  
Product specification  
Voltage regulator diodes  
1N4728A to 1N4749A  
FEATURES  
DESCRIPTION  
Total power dissipation:  
max. 1000 mW  
Low voltage regulator diodes in hermetically sealed SOD66 (DO-41) packages.  
The series consists of 22 types with nominal working voltages from 3.3 to 24 V.  
Tolerance series: ±5%  
Working voltage range:  
nom. 3.3 to 24 V.  
handbook, halfpage  
k
a
MAM241  
APPLICATIONS  
Low voltage stabilizers.  
The diodes are type branded.  
Fig.1 Simplified outline (SOD66; DO-41) and symbol.  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
IF  
continuous forward current  
working current  
500 mA  
IZM  
see Table  
“Per type”  
IZSM  
non-repetitive peak reverse current  
see Table  
“Per type”  
Ptot  
Tstg  
Tj  
total power dissipation  
storage temperature  
junction temperature  
Tamb = 50 °C  
1000 mW  
65  
65  
+200 °C  
+200 °C  
ELECTRICAL CHARACTERISTICS  
Total series  
Tj = 25 °C; unless otherwise specified.  
SYMBOL  
PARAMETER  
forward voltage  
CONDITIONS  
MIN.  
MAX.  
UNIT  
VF  
IF = 200 mA; see Fig.3  
1.2  
V
1996 Apr 26  
2
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