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M29W800DB90N1F 参数 Datasheet PDF下载

M29W800DB90N1F图片预览
型号: M29W800DB90N1F
PDF下载: 下载PDF文件 查看货源
内容描述: 8兆位( 1兆位×8或512千位×16 ,引导块) 3 V电源快闪记忆体 [8-Mbit (1 Mbit x 8 or 512 Kbits x 16, boot block) 3 V supply flash memory]
分类和应用:
文件页数/大小: 52 页 / 1105 K
品牌: NUMONYX [ NUMONYX B.V ]
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Common flash interface (CFI)  
M29W800DT, M29W800DB  
(1)  
Table 23. CFI query identification string  
Address  
Data  
Description  
Value  
x 16  
x 8  
10h  
11h  
12h  
13h  
14h  
15h  
16h  
17h  
18h  
19h  
1Ah  
20h  
22h  
24h  
26h  
28h  
2Ah  
2Ch  
2Eh  
30h  
32h  
34h  
0051h  
‘Q’  
‘R’  
‘Y’  
0052h Query unique ASCII string ‘QRY’  
0059h  
0002h  
AMD  
Primary algorithm command set and control interface ID  
code 16-bit ID code defining a specific algorithm  
compatible  
0000h  
0040h  
Address for primary algorithm extended query table (see  
Table 26)  
P = 40h  
NA  
0000h  
0000h  
Alternate vendor command set and control interface ID  
code second vendor - specified algorithm supported  
0000h  
0000h  
0000h  
Address for alternate algorithm extended query table  
NA  
1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’.  
Table 24. CFI query system interface information  
Address  
Data  
0027h  
0036h  
Description  
Value  
2.7 V  
3.6 V  
x 16  
x 8  
V
CC logic supply minimum program/erase voltage  
1Bh  
36h  
bit 7 to 4  
bit 3 to 0  
BCD value in volts  
BCD value in 100 mV  
VCC logic supply maximum program/erase voltage  
1Ch  
38h  
bit 7 to 4  
bit 3 to 0  
BCD value in volts  
BCD value in 100 mV  
1Dh  
1Eh  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
3Ah  
3Ch  
3Eh  
40h  
42h  
44h  
46h  
48h  
4Ah  
4Ch  
0000h VPP [programming] supply minimum program/erase voltage  
0000h PP [programming] supply maximum program/erase voltage  
0004h Typical timeout per single byte/word program = 2n µs  
0000h Typical timeout for minimum size write buffer program = 2n µs  
000Ah Typical timeout per individual block erase = 2n ms  
0000h Typical timeout for full chip erase = 2n ms (1)  
NA  
NA  
V
16 µs  
NA  
1 s  
0004h Maximum timeout for byte/word program = 2n times typical  
0000h Maximum timeout for write buffer program = 2n times typical  
0003h Maximum timeout per individual block erase = 2n times typical  
0000h Maximum timeout for chip erase = 2n times typical (1)  
256 µs  
NA  
8 s  
1. Not supported in the CFI.  
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