M29W640GH, M29W640GL, M29W640GT, M29W640GB
Common Flash Interface (CFI)
Table 32. CFI query system interface information
Address
Data
Description
Value
2.7V
3.6V
x16
x8
VCC Logic Supply Minimum Program/Erase voltage
1Bh 36h
1Ch 38h
0027h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
VCC Logic Supply Maximum Program/Erase voltage
0036h bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
VPP [Programming] Supply Minimum Program/Erase voltage
1Dh 3Ah 00B5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
11.5V
12.5V
VPP [Programming] Supply Maximum Program/Erase voltage
1Eh 3Ch 00C5h bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
1Fh 3Eh
0004h Typical timeout per single Byte/Word program = 2n µs
16µs
NA
20h
21h
22h
23h
24h
40h
42h
44h
46h
48h
0000h Typical timeout for minimum size write buffer program = 2n µs
000Ah Typical timeout per individual Block Erase = 2n ms
0000h Typical timeout for full Chip Erase = 2n ms
1s
NA
0004h Maximum timeout for Byte/Word program = 2n times typical
0000h Maximum timeout for write buffer program = 2n times typical
0003h Maximum timeout per individual Block Erase = 2n times typical
0000h Maximum timeout for Chip Erase = 2n times typical
256µs
NA
25h 4Ah
26h 4Ch
8s
NA
75/90
NUMONYX [ NUMONYX B.V ]
