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M29W320ET70ZE1 参数 Datasheet PDF下载

M29W320ET70ZE1图片预览
型号: M29W320ET70ZE1
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4Mbx8或2Mbx16 ,统一参数块,引导块) 3V供应闪存 [32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block) 3V supply Flash memory]
分类和应用: 闪存
文件页数/大小: 63 页 / 1191 K
品牌: NUMONYX [ NUMONYX B.V ]
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M29W320ET, M29W320EB  
Common Flash Interface (CFI)  
Table 24. CFI Query System Interface Information  
Address  
Data  
0027h  
0036h  
00B5h  
00C5h  
Description  
Value  
x16  
x8  
VCC Logic Supply Minimum Program/Erase voltage  
1Bh  
36h  
bit 7 to 4BCD value in volts  
2.7V  
3.6V  
bit 3 to 0BCD value in 100 mV  
VCC Logic Supply Maximum Program/Erase voltage  
bit 7 to 4BCD value in volts  
1Ch  
1Dh  
1Eh  
38h  
3Ah  
3Ch  
bit 3 to 0BCD value in 100 mV  
VPP [Programming] Supply Minimum Program/Erase voltage  
bit 7 to 4HEX value in volts  
11.5V  
12.5V  
bit 3 to 0BCD value in 100 mV  
V
PP [Programming] Supply Maximum Program/Erase voltage  
bit 7 to 4HEX value in volts  
bit 3 to 0BCD value in 100 mV  
1Fh  
20h  
21h  
22h  
23h  
24h  
25h  
26h  
3Eh  
40h  
42h  
44h  
46h  
48h  
4Ah  
4Ch  
0004h  
0000h  
000Ah  
0000h  
0004h  
0000h  
0003h  
0000h  
Typical timeout per single byte/word program = 2n µs  
Typical timeout for minimum size write buffer program = 2n µs  
Typical timeout per individual block erase = 2n ms  
16µs  
NA  
1s  
Typical timeout for full Chip Erase = 2n ms  
NA  
Maximum timeout for byte/word program = 2n times typical  
Maximum timeout for write buffer program = 2n times typical  
Maximum timeout per individual block erase = 2n times typical  
Maximum timeout for Chip Erase = 2n times typical  
256 µs  
NA  
8 s  
NA  
51/63  
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