M29W320ET
M29W320EB
32 Mbit (4Mbx8 or 2Mbx16, Uniform Parameter Blocks, Boot Block)
3V supply Flash memory
Features
■ Supply voltage
– V = 2.7V to 3.6V for Program, Erase and
CC
Read
– V =12V for Fast Program (optional)
PP
■ Access times: 70, 90ns
■ Programming time
– 10µs per byte/word typical
– Double word/ Quadruple byte Program
TSOP48 (N)
12 x 20mm
■ Memory Blocks
– Memory Array: 63 Main Blocks
FBGA
– 8 Parameter Blocks (Top or Bottom
Location)
■ Erase Suspend and Resume modes
– Read and Program another Block during
Erase Suspend
TFBGA48 (ZE)
6 x 8mm
■ Unlock Bypass Program command
– Faster Production/Batch Programming
■ V /WP pin for fast Program and Write Protect
PP
■ Temporary Block Unprotection mode
■ Common Flash Interface
– 64 bit Security code
■ Extended memory Block
– Extra block used as security block or to
store additional information
■ Low power consumption
– Standby and Automatic Standby
■ 100,000 Program/Erase cycles per block
■ Electronic signature
– Manufacturer code: 0020h
– Top Device code M29W320ET: 2256h
– Bottom Device code M29W320EB: 2257h
®
■ ECOPACK packages available
March 2008
Rev 6
1/63
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