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M29W320DB90ZE1E 参数 Datasheet PDF下载

M29W320DB90ZE1E图片预览
型号: M29W320DB90ZE1E
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位( 4Mbx8或2Mbx16 ,非均匀参数块,引导块) 3V供应闪存 [32 Mbit (4Mbx8 or 2Mbx16, Non-uniform Parameter Blocks, Boot Block), 3V Supply Flash memory]
分类和应用: 闪存存储内存集成电路
文件页数/大小: 56 页 / 1058 K
品牌: NUMONYX [ NUMONYX B.V ]
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Command Interface  
M29W320DT, M29W320DB  
Table 6.  
Program, Erase Times and Program, Erase Endurance Cycles  
Parameter  
Min  
Typ(1)(2)  
Max(2)  
Unit  
Chip Erase  
40  
0.8  
15  
10  
8
200(3)  
6(4)  
s
s
Block Erase (64 KBytes)  
Erase Suspend Latency Time  
Program (Byte or Word)  
25(4)  
µs  
200(3)  
150(3)  
200(3)  
100(3)  
µs  
Accelerated Program (Byte or Word)  
Chip Program (Byte by Byte)  
Chip Program (Word by Word)  
Program/Erase Cycles (per Block)  
Data Retention  
µs  
40  
20  
s
s
100,000  
20  
cycles  
years  
1. Typical values measured at room temperature and nominal voltages.  
2. Sampled, but not 100% tested.  
3. Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.  
4. Maximum value measured at worst case conditions for both temperature and VCC  
.
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