M29W320DT, M29W320DB
Common Flash Interface (CFI)
Table 23. CFI Query System Interface Information
Address
Data
0027h
0036h
00B5h
00C5h
Description
Value
x16
x8
VCC Logic Supply Minimum Program/Erase voltage
1Bh
36h
bit 7 to 4BCD value in volts
2.7V
3.6V
bit 3 to 0BCD value in 100 mV
V
CC Logic Supply Maximum Program/Erase voltage
1Ch
1Dh
1Eh
38h
3Ah
3Ch
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
VPP [Programming] Supply Minimum Program/Erase voltage
bit 7 to 4HEX value in volts
11.5V
12.5V
bit 3 to 0BCD value in 100 mV
VPP [Programming] Supply Maximum Program/Erase voltage
bit 7 to 4HEX value in volts
bit 3 to 0BCD value in 100 mV
1Fh
20h
21h
22h
23h
24h
25h
26h
3Eh
40h
42h
44h
46h
48h
4Ah
4Ch
0004h
0000h
000Ah
0000h
0005h
0000h
0004h
0000h
Typical timeout per single byte/word program = 2n µs
Typical timeout for minimum size write buffer program = 2n µs
Typical timeout per individual block erase = 2n ms
Typical timeout for full chip erase = 2n ms
16µs
NA
1s
NA
Maximum timeout for byte/word program = 2n times typical
Maximum timeout for write buffer program = 2n times typical
Maximum timeout per individual block erase = 2n times typical
Maximum timeout for chip erase = 2n times typical
512µs
NA
16s
NA
Table 24.
Device Geometry Definition
Address
Data
Description
Device Size = 2n in number of bytes
Value
x16
x8
27h
4Eh
0016h
4 MByte
28h
29h
50h
52h
0002h
0000h
x8, x16
Async.
Flash Device Interface Code description
2Ah
2Bh
54h
56h
0000h
0000h
Maximum number of bytes in multi-byte program or page = 2n
Number of Erase Block Regions within the device.
NA
4
2Ch
58h
0004h
It specifies the number of regions within the device containing
contiguous Erase Blocks of the same size.
2Dh
2Eh
5Ah
5Ch
0000h
0000h
Region 1 Information
1
Number of identical size erase block = 0000h+1
2Fh
30h
5Eh
60h
0040h
0000h
Region 1 Information
16 Kbyte
Block size in Region 1 = 0040h * 256 byte
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NUMONYX [ NUMONYX B.V ]
