M29W160ET, M29W160EB
Table 23. CFI Query System Interface Information
Address
Data
Description
Value
x16
x8
V
V
Logic Supply Minimum Program/Erase voltage
bit 7 to 4BCD value in volts
bit 3 to 0BCD value in 100 mV
CC
1Bh
36h
0027h
0036h
2.7V
3.6V
Logic Supply Maximum Program/Erase voltage
bit 7 to 4BCD value in volts
CC
1Ch
38h
bit 3 to 0BCD value in 100 mV
V
V
[Programming] Supply Minimum Program/Erase voltage
1Dh
1Eh
1Fh
3Ah
3Ch
3Eh
0000h
0000h
0004h
NA
NA
PP
[Programming] Supply Maximum Program/Erase voltage
PP
n
16µs
Typical timeout per single Byte/Word program = 2 µs
n
20h
21h
22h
23h
24h
25h
26h
40h
42h
44h
46h
48h
4Ah
4Ch
0000h
000Ah
0000h
0004h
0000h
0003h
0000h
NA
1s
Typical timeout for minimum size write buffer program = 2 µs
n
Typical timeout per individual block erase = 2 ms
n
NA
Typical timeout for full chip erase = 2 ms
n
256µs
NA
Maximum timeout for Byte/Word program = 2 times typical
n
Maximum timeout for write buffer program = 2 times typical
n
8s
Maximum timeout per individual block erase = 2 times typical
n
NA
Maximum timeout for chip erase = 2 times typical
31/40
NUMONYX [ NUMONYX B.V ]
