M28R400CT, M28R400CB
Table 26. CFI Query System Interface Information
Offset
Data
Description
Value
V
V
V
V
Logic Supply Minimum Program/Erase or Write voltage
DD
1Bh
0017h
1.7V
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
Logic Supply Maximum Program/Erase or Write voltage
DD
1Ch
1Dh
1Eh
0022h
00B4h
00C6h
2.2V
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
[Programming] Supply Minimum Program/Erase voltage
PP
11.4V
12.6V
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
[Programming] Supply Maximum Program/Erase voltage
PP
bit 7 to 4
bit 3 to 0
HEX value in volts
BCD value in 100 mV
n
1Fh
20h
21h
22h
23h
24h
25h
26h
0004h
0004h
000Ah
000Ch
0005h
0005h
0003h
0003h
16µs
16µs
1s
Typical time-out per single word program = 2 µs
n
Typical time-out for Double Word Program = 2 µs
n
Typical time-out per individual block erase = 2 ms
n
4s
Typical time-out for full chip erase = 2 ms
n
512µs
512µs
8s
Maximum time-out for word program = 2 times typical
n
Maximum time-out for Double Word Program = 2 times typical
n
Maximum time-out per individual block erase = 2 times typical
n
32s
Maximum time-out for chip erase = 2 times typical
33/48
NUMONYX [ NUMONYX B.V ]
