M28R400CT, M28R400CB
Table 5. Read Block Lock Signature
Block Status
Locked Block
E
G
W
A0
A1 A2-A7
A8-A11
A12-A17
DQ0 DQ1 DQ2-DQ15
V
V
IL
V
IH
V
V
V
0
0
Don't Care Block Address
Don't Care Block Address
1
0
0
0
00h
00h
IL
IL
IL
IH
IH
V
V
V
V
V
V
V
Unlocked Block
IL
IH
IL
Locked-Down
Block
(1)
V
V
0
Don't Care Block Address
1
00h
IL
IL
IH
IL
IH
X
Note: 1. A Locked-Down Block can be locked "DQ0 = 1" or unlocked "DQ0 = 0"; see BLOCK LOCKING section.
Table 6. Read Protection Register and Lock Register
Word
E
G
W
A0-A7
A8-A17
DQ0
DQ1
DQ2
DQ3-DQ7 DQ8-DQ15
OTP Prot.
data
Security
prot. data
V
V
V
Lock
80h Don't Care
0
00h
00h
IL
IL
IH
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
Unique ID 0
Unique ID 1
Unique ID 2
Unique ID 3
OTP 0
81h Don't Care
82h Don't Care
83h Don't Care
84h Don't Care
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
ID data
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IL
IH
IH
IH
IH
IH
IH
IH
IH
ID data
ID data
85h Don't Care OTP data
86h Don't Care OTP data
87h Don't Care OTP data
88h Don't Care OTP data
OTP data
OTP data
OTP data
OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP data OTP data OTP data
OTP 1
OTP 2
OTP 3
Table 7. Program, Erase Times and Program/Erase Endurance Cycles
M28R400C
Parameter
Test Conditions
Unit
Min
Typ
10
Max
200
200
5
V
= V
DD
Word Program
µs
PP
V
V
= 12V ±5%
= 12V ±5%
= V
Double Word Program
Main Block Program
10
µs
PP
0.16
0.32
0.02
0.04
1
s
PP
V
5
s
PP
DD
V
V
V
V
V
= 12V ±5%
= V
4
s
PP
Parameter Block Program
Main Block Erase
V
4
s
PP
DD
= 12V ±5%
= V
10
10
10
10
s
PP
V
1
s
PP
DD
= 12V ±5%
= V
2
s
PP
Chip Erase (preprogrammed)
Chip Program
V
2
s
PP
DD
= 12V ±5%
= V
1.25
25
s
PP
V
s
PP
DD
= 12V ±5%
= V
0.8
0.8
10
10
s
s
PP
Parameter Block Erase
V
PP
DD
Program/Erase Cycles (per Block)
100,000
cycles
14/48
NUMONYX [ NUMONYX B.V ]
