M28R400CT, M28R400CB
Table 14. DC Characteristics
Symbol
Parameter
Input Leakage Current
Output Leakage Current
Supply Current (Read)
Test Condition
Min
Typ
Max
±1
Unit
µA
I
0V≤ V ≤ V
LI
IN
DDQ
I
0V≤ V
≤V
±10
20
µA
LO
OUT DDQ
I
E = V , G = V , f = 5MHz
10
15
mA
DD
SS
IH
E = V
± 0.2V,
Supply Current (Stand-by or
Automatic Stand-by)
DDQ
I
50
50
20
20
20
20
50
400
µA
µA
DD1
RP = V
± 0.2V
DDQ
Supply Current
(Reset)
I
RP = V ± 0.2V
15
10
10
5
DD2
SS
Program in progress
mA
mA
mA
mA
µA
V
= 12V ± 5%
PP
I
Supply Current (Program)
Supply Current (Erase)
DD3
Program in progress
= V
V
PP
DD
Erase in progress
= 12V ± 5%
V
PP
I
DD4
Erase in progress
= V
5
V
PP
DD
E = V
± 0.2V,
Supply Current
(Program/Erase Suspend)
DDQ
I
DD5
Erase suspended
Program Current
(Read or Stand-by)
I
PP
V
> V
µA
PP
PP
DD
Program Current
(Read or Stand-by)
I
V
≤ V
5
5
µA
µA
mA
PP1
DD
I
RP = V ± 0.2V
Program Current (Reset)
PP2
SS
Program in progress
10
V
= 12V ± 5%
PP
I
Program Current (Program)
PP3
Program in progress
= V
5
µA
mA
µA
V
PP
DD
Erase in progress
= 12V ± 5%
10
V
PP
I
Program Current (Erase)
PP4
Erase in progress
= V
5
V
PP
DD
V
Input Low Voltage
Input High Voltage
–0.5
0.4
V
V
IL
V
V
V
–0.4
V
+0.4
DDQ
IH
DDQ
I
= 100µA, V = V min,
DD DD
OL
V
OL
Output Low Voltage
Output High Voltage
0.1
V
V
V
V
= V
min
DDQ
DDQ
I
= –100µA, V = V min,
DD DD
OH
V
OH
–0.1
DDQ
V
= V
min
DDQ
DDQ
Program Voltage (Program or
Erase operations)
V
PP1
1.65
2.2
Program Voltage
(Program or Erase
operations)
V
PPH
11.4
12.6
V
Program Voltage
(Program and Erase lock-out)
V
1
2
V
V
PPLK
V
DD
Supply Voltage (Program
V
LKO
and Erase lock-out)
21/48
NUMONYX [ NUMONYX B.V ]
