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M25PX64-VME6TPB 参数 Datasheet PDF下载

M25PX64-VME6TPB图片预览
型号: M25PX64-VME6TPB
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 8MX8, PDSO8,]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 66 页 / 1330 K
品牌: NUMONYX [ NUMONYX B.V ]
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Instructions  
M25PX64  
6.8  
Dual output fast read (DOFR)  
The dual output fast read (DOFR) instruction is very similar to the read data bytes at higher  
speed (FAST_READ) instruction, except that the data are shifted out on two pins (pin DQ0  
and pin DQ1) instead of only one. Outputting the data on two pins instead of one doubles  
the data transfer bandwidth compared to the read data bytes at higher speed (FAST_READ)  
instruction.  
The device is first selected by driving Chip Select (S) Low. The instruction code for the dual  
output fast read instruction is followed by a 3-byte address (A23-A0) and a dummy byte,  
each bit being latched-in during the rising edge of Serial Clock (C). Then the memory  
contents, at that address, are shifted out on DQ0 and DQ1 at a maximum frequency f ,  
C
during the falling edge of Serial Clock (C).  
The instruction sequence is shown in Figure 15.  
The first byte addressed can be at any location. The address is automatically incremented  
to the next higher address after each byte of data is shifted out on DQ0 and DQ1. The whole  
memory can, therefore, be read with a single dual output fast read (DOFR) instruction.  
When the highest address is reached, the address counter rolls over to 00 0000h, so that  
the read sequence can be continued indefinitely.  
Figure 15. Dual output fast read instruction sequence  
S
Mode 3  
Mode 2  
0
1
2
3
4
5
6
7
8
9
10  
28 29 30 31  
C
Instruction  
24-bit address (1)  
DQ0  
DQ1  
23 22 21  
3
2
1
0
High Impedance  
S
C
47  
32 33 34 35 36 37 38 39 40 41 42 43 44 45 46  
Dummy byte  
DQ0  
DQ1  
6
4
2
0
6
4
2
0
6
4
2
0
6
4
2
0
DATA OUT 1 DATA OUT 2 DATA OUT 3  
DATA OUT n  
7
5
3
1
7
5
3
1
7
5
3
1
7
5
1
3
MSB  
MSB  
MSB  
MSB  
MSB  
ai13574b  
1. Address bit A23 is don’t care.  
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