M25PE80
Instructions
6.15
Bulk erase (BE)
The bulk erase (BE) instruction sets all bits to ‘1’ (FFh). Before it can be accepted, a write
enable (WREN) instruction must previously have been executed. After the write enable
(WREN) instruction has been decoded, the device sets the write enable latch (WEL).
The bulk erase (BE) instruction is entered by driving Chip Select (S) Low, followed by the
instruction code on serial data input (D). Chip Select (S) must be driven Low for the entire
duration of the sequence.
The instruction sequence is shown in Figure 21.
Chip Select (S) must be driven High after the eighth bit of the instruction code has been
latched in, otherwise the bulk erase instruction is not executed. As soon as Chip Select (S)
is driven High, the self-timed bulk erase cycle (whose duration is t ) is initiated. While the
BE
bulk erase cycle is in progress, the status register may be read to check the value of the
write in progress (WIP) bit. The write in progress (WIP) bit is 1 during the self-timed bulk
erase cycle, and is 0 when it is completed. At some unspecified time before the cycle is
completed, the write enable latch (WEL) bit is reset.
Any bulk erase (BE) instruction, while an erase, program or write cycle is in progress, is
rejected without having any effects on the cycle that is in progress. A bulk erase (BE)
instruction is ignored if at least one sector or subsector is write-protected (Hardware or
software protection).
If Reset (Reset) is driven Low while a bulk erase (BE) cycle is in progress, the bulk erase
cycle is interrupted and data may not be erased correctly (see Table 15: Device status after
a Reset Low pulse). On Reset going Low, the device enters the reset mode and a time of
t
is then required before the device can be re-selected by driving Chip Select (S) Low.
RHSL
For the value of t
see Table 26: Timings after a Reset Low pulse in Section 11: DC and
RHSL
AC parameters.
Figure 21. Bulk erase (BE) instruction sequence
S
0
1
2
3
4
5
6
7
C
D
Instruction
AI03752D
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