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M25PE40-VMN6G 参数 Datasheet PDF下载

M25PE40-VMN6G图片预览
型号: M25PE40-VMN6G
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位,页擦除串行闪存与字节变性, 75兆赫的SPI总线,标准引脚 [4 Mbit, page-erasable serial Flash memory with byte alterability, 75 MHz SPI bus, standard pinout]
分类和应用: 闪存内存集成电路光电二极管时钟
文件页数/大小: 62 页 / 1298 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25PE40  
Power-up and power-down  
Figure 24. Power-up timing  
V
CC  
V
(max)  
CC  
Program, Erase and Write commands are rejected by the device  
Chip selection not allowed  
V
(min)  
CC  
tVSL  
Read access allowed  
Device fully  
accessible  
Reset state  
of the  
device  
V
WI  
tPUW  
time  
AI04009C  
Table 11. Power-up timing and V threshold  
WI  
Symbol  
Parameter  
Min.  
Max.  
Unit  
(1)  
tVSL  
VCC(min) to S low  
30  
1
µs  
ms  
V
(1)  
tPUW  
Time delay before the first Write, Program or Erase instruction  
Write Inhibit voltage  
10  
(1)  
VWI  
1.5  
2.5  
1. These parameters are characterized only, over the temperature range –40 °C to +85 °C.  
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