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M25PE40VMW6TG 参数 Datasheet PDF下载

M25PE40VMW6TG图片预览
型号: M25PE40VMW6TG
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM, 512KX8, Serial, CMOS, PDSO8, 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
文件页数/大小: 62 页 / 1293 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25PE40  
Signal description  
2.6  
Write Protect (W) or Top Sector Lock (TSL)  
The Write Protect function is available in the T9HX process only (see Important  
note on page 6).  
The Write Protect (W) input is used to freeze the size of the area of memory that is  
protected against write, program and erase instructions (as specified by the values in  
the BP2, BP1 and BP0 bits of the Status Register. See Section 6.4: Read Status  
Register (RDSR) for a description of these bits.  
The Top Sector Lock function is available in the T7X process only (see Important  
note on page 6).  
The input signal sets the device in the Hardware Protected mode, when Top Sector  
Lock (TSL) is connected to V , causing the top 256 pages (upper addresses) of the  
SS  
memory to become read-only (protected from write, program and erase operations).  
When Top Sector Lock (TSL) is connected to V , the top 256 pages of memory  
CC  
behave like the other pages of memory.  
2.7  
2.8  
VCC supply voltage  
V
is the supply voltage.  
CC  
VSS ground  
V
is the reference for the V supply voltage.  
CC  
SS  
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