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M25PE16-VMW6G 参数 Datasheet PDF下载

M25PE16-VMW6G图片预览
型号: M25PE16-VMW6G
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位,页擦除串行闪存与字节变性, 75兆赫的SPI总线,标准引脚 [16-Mbit, page-erasable serial flash memory with byte-alterability, 75 MHz SPI bus, standard pinout]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 58 页 / 1214 K
品牌: NUMONYX [ NUMONYX B.V ]
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DC and AC parameters  
M25PE16  
Table 20. Reset conditions  
Test conditions specified in Table 14 and Table 15  
Symbol  
Alt.  
Parameter  
Conditions  
Min.  
Typ. Max. Unit  
(1)  
tRLRH  
tRST Reset pulse width  
10  
µs  
Chip should have been  
deselected before reset is  
de-asserted  
Chip Select High to  
Reset High  
tSHRH  
10  
ns  
1. Value guaranteed by characterization, not 100% tested in production.  
(1)(2)  
Table 21. Timings after a Reset Low pulse  
Test conditions specified in Table 14 and Table 15  
Conditions:  
reset pulse occurred  
Symbol Alt. Parameter  
Min.  
Typ.  
Max.  
Unit  
While decoding an instruction(3)  
WREN, WRDI, RDID, RDSR,  
READ, RDLR, Fast_Read,  
WRLR, PW, PP, PE, SE, BE,  
SSE, DP, RDP  
:
30  
µs  
Under completion of an erase or  
program cycle of a PW, PP, PE,  
SE, BE operation  
300  
µs  
Reset  
tRHSL tREC recovery  
time  
Under completion of an erase  
cycle of an SSE operation  
3
ms  
tW (see  
Table 18 or ms  
Table 19)  
Under completion of a WRSR  
operation  
Device deselected (S High) and  
in standby mode  
0
µs  
1. All the values are guaranteed by characterization, and not 100% tested in production.  
2. See Table 12 for a description of the device status after a Reset Low pulse.  
3. S remains Low while Reset is Low.  
Figure 28. Reset AC waveforms while a program or erase cycle is in progress  
S
tSHRH  
tRHSL  
tRLRH  
Reset  
AI06808b  
52/58  
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