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M25PE10-VMP6P 参数 Datasheet PDF下载

M25PE10-VMP6P图片预览
型号: M25PE10-VMP6P
PDF下载: 下载PDF文件 查看货源
内容描述: 1和2兆,页擦除串行闪存与字节变性, 75兆赫的SPI总线,标准引脚 [1 and 2 Mbit, page-erasable serial Flash memories with byte alterability, 75 MHz SPI bus, standard pinout]
分类和应用: 闪存
文件页数/大小: 64 页 / 1231 K
品牌: NUMONYX [ NUMONYX B.V ]
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Revision history  
M25PE20, M25PE10  
14  
Revision history  
Table 30. Document revision history  
Date  
Version  
Changes  
07-Dec-2004  
0.1  
Document written  
Notes 1 and 2 removed from Table 29: Ordering information scheme.  
S08N silhouette corrected on page 1.  
21-Dec-2004  
6-Oct-2005  
0.2  
1.0  
Added Table 22: AC characteristics (33 MHz operation). Document status  
promoted to full Datasheet. An easy way to modify data, A fast way to  
modify data, Page Write (PW) and Page Program (PP) sections updated  
to explain optimal use of Page Write and Page Program instructions. Clock  
slew rate changed from 0.03 to 0.1 V/ns. Updated Table 29: Ordering  
information scheme. Added ECOPACK® information.  
Document converted to the new Numonyx template.  
MLP package removed, SO8N package specifications updated (see  
10-Jul-2006  
2
Section 12: Package mechanical).  
Figure 5: SPI modes supported updated and Note 2 added. Timing line of  
tSHQZ moved in Figure 29.  
50 MHz frequency added. VFQFPN package added (see Section 12:  
Package mechanical).  
The sectors are further divided up into subsectors (see Table 5: M25PE20  
memory organization and Table 6: M25PE10 memory organization).  
Important note on page 6 added. Figure 4: Bus master and memory  
devices on the SPI bus updated and explanatory paragraph added. VCC  
supply voltage and VSS ground added. Section 4.8: Protection modes  
modified. Section 8: Reset added, Reset timings table split into Table 25:  
Reset conditions and Table 26: Timings after a Reset Low pulse.  
At power-up the WIP bit is reset and the Lock Registers are reset (see  
Section 7: Power-up and power-down).  
VIO max changed in Table 15: Absolute maximum ratings.  
M25PE20 and M25PE10 products processed in T9HX process added to  
datasheet:  
25-Jan-2007  
3
– WP pin replaces TSL (T7X technology), see Section 2.7: Write Protect  
(W) or Top Sector Lock (TSL)  
Read Lock Register (RDLR), Write to Lock Register (WRLR), Write  
Status Register (WRSR), SubSector Erase (SSE) and Bulk Erase (BE)  
instructions added for T9HX process  
– subsector protection granularity removed in T9HX process, still exists in  
T7X process  
Table 5: M25PE20 memory organization and Table 6: M25PE10  
memory organization updated to show subsectors  
– Status Register BP1, BP0 bits and SRWD bit added.  
Small text changes.  
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