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M25P40-VMN3G/X 参数 Datasheet PDF下载

M25P40-VMN3G/X图片预览
型号: M25P40-VMN3G/X
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位,低电压,串行闪存,具有50 MHz SPI总线接口 [4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 53 页 / 1017 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25P40  
DC and ac parameters  
Table 16. Instruction times (device grade 3)  
Test conditions specified in Table 10 and Table 17  
Symbol  
Alt.  
Parameter  
Min.  
Typ.(1) (2) Max.(2) Unit  
tW  
Write Status Register cycle time  
8
15  
ms  
Page Program cycle time (256 bytes)  
1.5  
(3)  
tPP  
5
ms  
0.4+  
n*1.1/256  
Page Program cycle time (n bytes)  
tSE  
tBE  
Sector Erase cycle time  
Bulk Erase cycle time  
1
3
s
s
4.5  
10  
1. At 85 °C  
2. Preliminary data.  
3. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are  
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 n ≤  
256)  
Table 17. AC measurement conditions  
Symbol  
Parameter  
Load capacitance  
Min.  
Max.  
Unit  
CL  
30  
pF  
ns  
V
Input rise and fall times  
5
Input pulse voltages  
0.2VCC to 0.8VCC  
0.3VCC to 0.7VCC  
VCC / 2  
Input timing reference voltages  
Output timing reference voltages  
V
V
1. Output Hi-Z is defined as the point where data out is no longer driven.  
Figure 21. AC measurement I/O waveform  
Input Levels  
Input and Output  
Timing Reference Levels  
0.8V  
CC  
0.7V  
CC  
0.5V  
CC  
0.3V  
CC  
0.2V  
CC  
AI07455  
Table 18. Which AC characteristics to use?  
Device grade  
VCC = 2.3 V to 3.6 V  
VCC = 2.7 V to 3.6 V  
AC characteristics at 25 MHz (Table 19)  
Device grade 3  
Device grade 6  
1. Not applicable.  
N/A(1)  
AC characteristics at 40 MHz (Table 21) AC characteristics at 50 MHz (Table 20)  
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