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M25P40-VMN3G/X 参数 Datasheet PDF下载

M25P40-VMN3G/X图片预览
型号: M25P40-VMN3G/X
PDF下载: 下载PDF文件 查看货源
内容描述: 4兆位,低电压,串行闪存,具有50 MHz SPI总线接口 [4 Mbit, low voltage, serial Flash memory with 50 MHz SPI bus interface]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 53 页 / 1017 K
品牌: NUMONYX [ NUMONYX B.V ]
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Power-up and Power-down  
Figure 20. Power-up timing  
M25P40  
V
CC  
V
(max)  
CC  
Program, Erase and Write Commands are Rejected by the Device  
Chip Selection Not Allowed  
V
(min)  
CC  
tVSL  
Read Access allowed  
Device fully  
accessible  
Reset State  
of the  
Device  
V
WI  
tPUW  
time  
AI04009C  
Table 8.  
Symbol  
Power-up timing and V threshold  
WI  
Parameter  
Min.  
Max.  
Unit  
(1)  
tVSL  
VCC(min) to S low  
10  
1
µs  
ms  
V
(1)  
tPUW  
Time delay to Write instruction  
Write Inhibit voltage (device grade 6)  
Write Inhibit voltage (device grade 3)  
10  
2
1
(1)  
VWI  
1
2.2  
V
1. These parameters are characterized only.  
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