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M25P40-VMN6TG/4 参数 Datasheet PDF下载

M25P40-VMN6TG/4图片预览
型号: M25P40-VMN6TG/4
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM, 512KX8, Serial, CMOS, PDSO8, 0.150 INCH, ROHS COMPLIANT, PLASTIC, SOP-8]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
文件页数/大小: 57 页 / 1161 K
品牌: NUMONYX [ NUMONYX B.V ]
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Operating features  
M25P40  
4
Operating features  
4.1  
Page Programming  
To program one data byte, two instructions are required: Write Enable (WREN), which is  
one byte, and a Page Program (PP) sequence, which consists of four bytes plus data. This  
is followed by the internal Program cycle (of duration tPP).  
To spread this overhead, the Page Program (PP) instruction allows up to 256 bytes to be  
programmed at a time (changing bits from 1 to 0), provided that they lie in consecutive  
addresses on the same page of memory.  
For optimized timings, it is recommended to use the Page Program (PP) instruction to  
program all consecutive targeted bytes in a single sequence versus using several Page  
Program (PP) sequences with each containing only a few bytes (see Page Program (PP),  
Instruction times, process technology T9HX.  
4.2  
Sector Erase and Bulk Erase  
The Page Program (PP) instruction allows bits to be reset from 1 to 0. Before this can be  
applied, the bytes of memory need to have been erased to all 1s (FFh). This can be  
achieved either a sector at a time, using the Sector Erase (SE) instruction, or throughout the  
entire memory, using the Bulk Erase (BE) instruction. This starts an internal Erase cycle (of  
duration tSE or tBE).  
The Erase instruction must be preceded by a Write Enable (WREN) instruction.  
4.3  
4.4  
Polling during a Write, Program or Erase cycle  
A further improvement in the time to Write Status Register (WRSR), Program (PP) or Erase  
(SE or BE) can be achieved by not waiting for the worst case delay (tW, tPP, tSE, or tBE). The  
Write In Progress (WIP) bit is provided in the Status Register so that the application program  
can monitor its value, polling it to establish when the previous Write cycle, Program cycle or  
Erase cycle is complete.  
Active Power, Standby Power and Deep Power-down modes  
When Chip Select (S) is Low, the device is selected, and in the Active Power mode.  
When Chip Select (S) is High, the device is deselected, but could remain in the Active  
Power mode until all internal cycles have completed (Program, Erase, Write Status  
Register). The device then goes in to the Standby Power mode. The device consumption  
drops to ICC1  
.
The Deep Power-down mode is entered when the specific instruction (the Deep Power-  
down (DP) instruction) is executed. The device consumption drops further to ICC2. The  
device remains in this mode until another specific instruction (the Release from Deep  
Power-down and Read Electronic Signature (RES) instruction) is executed.  
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