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M25P40SVMW6TP/4 参数 Datasheet PDF下载

M25P40SVMW6TP/4图片预览
型号: M25P40SVMW6TP/4
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM, 512KX8, Serial, CMOS, PDSO8, 0.208 INCH, ROHS COMPLIANT, PLASTIC, SOP-8]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
文件页数/大小: 57 页 / 1161 K
品牌: NUMONYX [ NUMONYX B.V ]
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Power-up and Power-down  
M25P40  
Figure 20. Power-up timing  
V
CC  
V
(max)  
CC  
Program, Erase and Write Commands are Rejected by the Device  
Chip Selection Not Allowed  
V
(min)  
CC  
tVSL  
Read Access allowed  
Device fully  
accessible  
Reset State  
of the  
Device  
V
WI  
tPUW  
time  
AI04009C  
Table 8.  
Symbol  
Power-up timing and VWI threshold  
Parameter  
Min.  
Max.  
Unit  
(1)  
tVSL  
VCC(min) to S low  
10  
1
μs  
ms  
V
(1)  
tPUW  
Time delay to Write instruction  
Write Inhibit voltage (device grade 6)  
Write Inhibit voltage (device grade 3)  
10  
2.1  
2.1  
1
(1)  
VWI  
1
V
1. These parameters are characterized only.  
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