DC and AC parameters
M25P40
Table 15. DC characteristics (device grade 3)
Test condition (in addition to
Symbol
Parameter
Min(1)
Max(1) Unit
those in Table 10)
ILI
Input leakage current
Output leakage current
Standby current
± 2
± 2
100
50
μA
μA
μA
μA
ILO
ICC1
ICC2
S = VCC, VIN = VSS or VCC
S = VCC, VIN = VSS or VCC
Deep Power-down current
C = 0.1VCC / 0.9.VCC at 25 MHz
and 75 MHz, Q = open
8
4
mA
mA
ICC3
Operating current (READ)
C = 0.1VCC / 0.9.VCC at 20 MHz
and 33 MHz, Q = open
ICC4
ICC5
ICC6
ICC7
VIL
Operating current (PP)
Operating current (WRSR)
Operating current (SE)
Operating current (BE)
Input low voltage
S = VCC
S = VCC
S = VCC
S = VCC
15
15
mA
mA
mA
mA
V
15
15
– 0.5
0.3VCC
VIH
Input high voltage
0.7VCC VCC+0.4
V
VOL
VOH
Output low voltage
IOL = 1.6 mA
0.4
V
Output high voltage
IOH = –100 μA
VCC–0.2
V
1. This is preliminary data.
Table 16. Instruction times, process technology T9HX(1)
Test conditions specified in Table 10 and Table 18
Symbol
Alt.
Parameter
Min.
Typ.
Max.
Unit
tW
Write Status Register cycle time
1.3
0.8
15
ms
Page Program cycle time (256 bytes)
(2)
tPP
5
ms
int (n/8) ×
0.025 (2)
Page Program cycle time (n bytes)
tSE
tBE
Sector Erase cycle time
Bulk Erase cycle time
0.6
4.5
3
s
s
10
1. Technology T9HX devices are identified by process identification digit "4" in the device marking and
process letter "B" in the part number.
2. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤
256)
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NUMONYX [ NUMONYX B.V ]
