Revision history
M25P40
13
Revision history
Table 28. Document revision history
Date
Revision
Changes
12-Apr-2001
25-May-2001
1.0
1.1
Document written.
Serial Paged Flash Memory renamed as Serial Flash Memory.
Changes to text: Signal Description/Chip Select; Hold Condition/1st para; Protection
modes; Release from Power-down and Read Electronic Signature (RES); Power-
up.
11-Sep-2001
1.2
Repositioning of several tables and illustrations without changing their contents.
Power-up timing illustration; SO8W package removed.
Changes to tables: Abs Max Ratings/VIO; DC Characteristics/VIL.
FAST_READ instruction added. Document revised with new timings, VWI, ICC3 and
clock slew rate. Descriptions of Polling, Hold Condition, Page Programming,
Release for Deep Power-down made more precise. Value of tW(max) modified.
16-Jan-2002
12-Sep-2002
1.3
1.4
Clarification of descriptions of entering Standby Power mode from Deep Power-
down mode, and of terminating an instruction sequence or data-out sequence.
VFQFPN8 package (MLP8) added. Document promoted to Preliminary Data.
Typical Page Program time improved. Deep Power-down current changed. Write
Protect setup and hold times specified, for applications that switch Write Protect to
exit the Hardware Protection mode immediately before a WRSR, and to enter the
Hardware Protection mode again immediately after.
13-Dec-2002
12-Jun-2003
24-Nov-2003
1.5
1.6
2.0
Document promoted from Preliminary Data to full Datasheet.
Table of contents, warning about exposed paddle on MLP8, and Pb-free options
added.
40 MHz AC Characteristics table included as well as 25 MHz. ICC3(max), tSE(typ)
and tBE(typ) values improved. Change of naming for VDFPN8 package.
Automotive range added. Soldering temperature information clarified for RoHS
compliant devices.
12-Mar-2004
05-Aug-2004
3.0
4.0
Device grade information clarified. Data-retention measurement temperature
corrected. Details of how to find the date of marking added.
Small text changes. Notes 2 and 3 removed from Table 27: Ordering information
scheme.
03-Jan-2005
01-Aug-2005
5.0
6.0
End timing line of tSHQZ modified in Figure 25: Output timing.
Updated Page Program (PP) instructions in Page Programming, Page Program
(PP), Instruction times, process technology T9HX.
50 MHz operation added (see Table 20: AC characteristics (50 MHz operation,
device grade 6, VCC min = 2.7 V)). All packages are RoHS compliant. Blank option
removed from under Plating technology in Table 27: Ordering information scheme.
MLP package renamed as VFQFPN, silhouette and package mechanical drawing
updated (see on page 1 and Figure 29: VFQFPN8 (MLP8) 8-lead Very thin Fine
pitch Quad Flat Package No lead, 6 × 5 mm, package outline.
24-Oct-2005
7.0
54/57
NUMONYX [ NUMONYX B.V ]
