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M25P40-VMP6TG/4 参数 Datasheet PDF下载

M25P40-VMP6TG/4图片预览
型号: M25P40-VMP6TG/4
PDF下载: 下载PDF文件 查看货源
内容描述: [EEPROM, 512KX8, Serial, CMOS, PDSO8, 6 X 5 MM, ROHS COMPLIANT, VFQFPN-8]
分类和应用: 可编程只读存储器电动程控只读存储器电可擦编程只读存储器时钟光电二极管内存集成电路
文件页数/大小: 57 页 / 1161 K
品牌: NUMONYX [ NUMONYX B.V ]
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M25P40  
DC and AC parameters  
Table 17. Instruction times, process technology T7Y(1)  
Test conditions specified in Table 10 and Table 18  
Symbol  
Alt.  
Parameter  
Min.  
Typ.  
Max.  
Unit  
tW  
Write Status Register cycle time  
5
15  
ms  
Page Program cycle time (256 bytes)  
1.4  
(2)  
tPP  
5
ms  
0.4+n*1/  
256(2)  
Page Program cycle time (n bytes)  
tSE  
tBE  
Sector Erase cycle time  
Bulk Erase cycle time  
1
3
s
s
4.5  
10  
1. Technology T7Y devices are identified by process identification digit "X" in the device marking.  
2. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are  
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 n ≤  
256)  
Table 18. AC measurement conditions  
Symbol  
Parameter  
Load capacitance  
Min.  
Max.  
Unit  
CL  
30  
pF  
ns  
V
Input rise and fall times  
5
Input pulse voltages  
0.2VCC to 0.8VCC  
0.3VCC to 0.7VCC  
VCC / 2  
Input timing reference voltages  
Output timing reference voltages  
V
V
1. Output Hi-Z is defined as the point where data out is no longer driven.  
Figure 21. AC measurement I/O waveform  
Input Levels  
Input and Output  
Timing Reference Levels  
0.8V  
CC  
0.7V  
CC  
CC  
0.3V  
CC  
0.5V  
0.2V  
CC  
AI07455  
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