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M25P32-VMW6TG 参数 Datasheet PDF下载

M25P32-VMW6TG图片预览
型号: M25P32-VMW6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 32兆位,低电压,串行闪存与75 MHz的SPI总线接口 [32-Mbit, low voltage, serial Flash memory with 75 MHz SPI bus interface]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 53 页 / 1012 K
品牌: NUMONYX [ NUMONYX B.V ]
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DC and AC parameters  
M25P32  
Table 14.  
Symbol  
AC characteristics (T9HX technology)  
Applies only to products made with T9HX technology, identified with Process digit “4”(1)  
Test conditions specified in Table 10 and Table 11  
Alt.  
Parameter  
Min.  
Typ.(2)  
Max. Unit  
Clock frequency for the following instructions:  
fC  
fC FAST_READ, PP, SE, BE, DP, RES, WREN, WRDI,  
RDID, RDSR, WRSR  
D.C.  
75  
33  
MHz  
fR  
Clock frequency for READ instructions  
tCLH Clock High time  
D.C.  
9
MHz  
ns  
(3)  
tCH  
(2)  
tCL  
tCLL Clock Low time  
9
ns  
(4)  
tCLCH  
Clock rise time(5) (peak to peak)  
Clock fall time(5) (peak to peak)  
tCSS S active setup time (relative to C)  
S not active hold time (relative to C)  
tDSU Data In setup time  
0.1  
0.1  
5
V/ns  
V/ns  
ns  
(4)  
tCHCL  
tSLCH  
tCHSL  
tDVCH  
tCHDX  
tCHSH  
tSHCH  
tSHSL  
5
ns  
2
ns  
tDH Data In hold time  
5
ns  
S active hold time (relative to C)  
S not active setup time (relative to C)  
tCSH S deselect time  
5
ns  
5
ns  
100  
ns  
(4)  
tSHQZ  
tDIS Output Disable time  
8
8
ns  
tCLQV  
tCLQX  
tHLCH  
tCHHH  
tHHCH  
tCHHL  
tV Clock Low to Output valid  
tHO Output hold time  
ns  
0
5
5
5
5
ns  
HOLD setup time (relative to C)  
HOLD hold time (relative to C)  
HOLD setup time (relative to C)  
HOLD hold time (relative to C)  
tLZ HOLD to Output Low-Z  
tHZ HOLD to Output High-Z  
Write Protect setup time  
ns  
ns  
ns  
ns  
(4)  
tHHQX  
8
8
ns  
(4)  
tHLQZ  
ns  
(6)  
tWHSL  
20  
ns  
(6)  
tSHWL  
Write Protect hold time  
100  
ns  
Enhanced Program supply voltage High to Chip Select  
Low  
(7)  
tVPPHSL  
200  
ns  
µs  
µs  
(4)  
tDP  
S High to Deep Power-down mode  
3
S High to Standby mode without Electronic Signature  
Read  
(4)  
tRES1  
30  
S High to Standby mode with Electronic Signature  
Read  
(4)  
tRES2  
30  
µs  
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