M25P32
DC and AC parameters
Table 14.
AC characteristics (T9HX technology) (continued)
Applies only to products made with T9HX technology, identified with Process digit “4”(1)
Test conditions specified in Table 10 and Table 11
Symbol
Alt.
Parameter
Min.
Typ.(2)
Max. Unit
tW
Write Status Register cycle time
1.3
15
ms
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Page Program cycle time (VPP = VPPH) (256 bytes)
Sector Erase cycle time
0.64
(8)
tPP
int(n/8) × 0.02(9)
5
ms
0.64
0.6
0.6
23
tSE
3
s
s
Sector Erase cycle time (VPP = VPPH
Bulk Erase cycle time
)
tBE
80
Bulk Erase cycle time (VPP = VPPH
)
13
1. Details of how to find the Technology Process in the marking are given in AN1995, see also Section 12: Part numbering.
2. Typical values given for TA = 25 °C.
3. tCH + tCL must be greater than or equal to 1/ fC
4. Value guaranteed by characterization, not 100% tested in production.
5. Expressed as a slew-rate.
6. Only applicable as a constraint for a WRSR instruction when SRWD is set at 1.
7. VPPH should be kept at a valid level until the program or erase operation has completed and its result (success or failure) is
known.
8. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are obtained with one
sequence including all the bytes versus several sequences of only a few bytes. (1 ≤n ≤256)
9. int(A) corresponds to the upper integer part of A. E.g. int(12/8) = 2, int(32/8) = 4 int(15.3) =16.
Figure 23. Serial input timing
tSHSL
S
tCHSL
tSLCH
tCHSH
tSHCH
C
tDVCH
tCHCL
tCHDX
tCLCH
MSB IN
LSB IN
D
Q
High Impedance
AI01447C
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NUMONYX [ NUMONYX B.V ]
