欢迎访问ic37.com |
会员登录 免费注册
发布采购

M25P32-VMF6PB 参数 Datasheet PDF下载

M25P32-VMF6PB图片预览
型号: M25P32-VMF6PB
PDF下载: 下载PDF文件 查看货源
内容描述: [暂无描述]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 53 页 / 1012 K
品牌: NUMONYX [ NUMONYX B.V ]
 浏览型号M25P32-VMF6PB的Datasheet PDF文件第45页浏览型号M25P32-VMF6PB的Datasheet PDF文件第46页浏览型号M25P32-VMF6PB的Datasheet PDF文件第47页浏览型号M25P32-VMF6PB的Datasheet PDF文件第48页浏览型号M25P32-VMF6PB的Datasheet PDF文件第49页浏览型号M25P32-VMF6PB的Datasheet PDF文件第50页浏览型号M25P32-VMF6PB的Datasheet PDF文件第52页浏览型号M25P32-VMF6PB的Datasheet PDF文件第53页  
M25P32  
Revision history  
13  
Revision history  
Table 20. Document revision history  
Date  
Revision  
Changes  
28-Apr-2003  
15-May-2003  
20-Jun-2003  
18-Jul-2003  
0.1  
0.2  
0.3  
0.4  
Target Specification Document written in brief form  
Target Specification Document written in full  
8x6 MLP8 and SO16(300 mil) packages added  
tPP, tSE and tBE revised  
SO16 package code changed. Output Timing Reference Voltage  
changed.  
24-Sep-2003  
0.5  
Table of contents, warning about exposed paddle on MLP8, and Pb-free  
options added.  
04-Dec-2003  
0.6  
Value of tVSL(min) VWI, tPP(typ) and tBE(typ) changed. Change of naming  
for VDFPN8 package.  
10-Dec-2003  
01-Apr-2004  
05-Aug-2004  
01-Oct-2004  
1.0  
2.0  
3.0  
4.0  
Document promoted to Product Preview  
Document promoted to Preliminary Data. Soldering temperature  
information clarified for RoHS compliant devices. Device grade  
information clarified  
Device grade information further clarified  
Document promoted to mature datasheet. Footnotes removed from P and  
G options in Ordering Information table. Minor wording improvements  
made.  
Read Identification (RDID), Deep Power-down (DP) and Release from  
Deep Power-down and Read Electronic Signature (RES) instructions, and  
Active Power, Standby Power and Deep Power-down modes paragraph  
clarified.  
01-Apr-2005  
01-Aug-2005  
5.0  
6.0  
Updated Page Program (PP) instructions in Page Programming, Page  
Program (PP) and Table 14: AC characteristics.  
Fast Program/Erase mode added and Power-up specified for Fast  
Program/Erase mode in Power-up and Power-down section. W pin  
changed to W/VPP. (see Write Protect/Enhanced Program supply voltage  
(W/VPP) description).  
23-Jan-2006  
7.0  
tVPPHSL added to Table 14: AC characteristics and tPP for Fast  
Program/Erase mode added. Figure 27: VPPH timing inserted. Note 2  
added below Figure 28 All packages are ECOPACK® compliant. Blank  
option removed under Plating Technology in Table 19  
VDFPN8 package specifications updated (see Section 11: Package  
mechanical).  
10-Feb-2006  
28-Nov-2006  
8.0  
9
MLP8 5 × 6 mm and SO8W packages added (see Section 11: Package  
mechanical). VCC supply voltage and VSS ground descriptions added.  
Figure 4: Bus Master and memory devices on the SPI bus updated and  
explanation added below.  
Table 9: Absolute maximum ratings: VIO max modified and TLEAD added.  
Products in T9HX technology introduced (see Table 14: AC  
characteristics (T9HX technology)). Small text changes.  
51/53