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M25P20-VMN3TP/X 参数 Datasheet PDF下载

M25P20-VMN3TP/X图片预览
型号: M25P20-VMN3TP/X
PDF下载: 下载PDF文件 查看货源
内容描述: 2兆位,低电压,串行闪存与50MHz的SPI总线接口 [2 Mbit, low voltage, Serial Flash memory with 50MHz SPI bus interface]
分类和应用: 闪存内存集成电路光电二极管时钟
文件页数/大小: 50 页 / 964 K
品牌: NUMONYX [ NUMONYX B.V ]
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Revision history  
M25P20  
13  
Revision history  
Table 24. Document revision history  
Date  
Revision  
Changes  
12-Apr-2001  
25-May-2001  
1.0  
1.1  
Document written  
Serial Paged Flash Memory renamed as Serial Flash Memory  
Changes to text: Signal Description/Chip Select; Hold Condition/1st para;  
Protection modes; Release from Power-down and Read Electronic  
Signature (RES); Power-up  
Repositioning of several tables and illustrations without changing their  
contents  
11-Sep-2001  
16-Jan-2002  
1.2  
1.3  
Power-up timing illustration; SO8W package removed  
Changes to tables: Abs Max Ratings/VIO; DC Characteristics/VIL  
FAST_READ instruction added. Document revised with new timings, VWI  
ICC3 and clock slew rate. Descriptions of Polling, Hold Condition, Page  
Programming, Release for Deep Power-down made more precise. Value  
of tW(max) modified.  
,
Clarification of descriptions of entering Standby Power mode from Deep  
Power-down mode, and of terminating an instruction sequence or data-  
out sequence.  
16-May-2002  
12-Sep-2002  
1.4  
1.5  
VFQFPN8 package (MLP8) added. Document promoted to full datasheet.  
Typical Page Program time improved. Write Protect setup and hold times  
specified, for applications that switch Write Protect to exit the Hardware  
Protection mode immediately before a WRSR, and to enter the Hardware  
Protection mode again immediately after.  
13-Dec-2002  
24-Nov-2003  
1.6  
2.0  
Table of contents, warning about exposed paddle on MLP8, and Pb-free  
options added.  
40MHz AC Characteristics table included as well as 25MHz. ICC3(max),  
tSE(typ) and tBE(typ) values improved. Change of naming for VDFPN8  
package  
Automotive range added. Soldering temperature information clarified for  
RoHS compliant devices. Device Grade clarified  
26-Apr-2004  
05-Aug-2004  
21-Dec-2004  
3.0  
4.0  
5.0  
Device Grade information clarified. Data-retention measurement  
temperature corrected. Details of how to find the date of marking added.  
2 Notes removed from Table 23: Ordering Information Scheme. Small text  
changes. End timing line of tSHQZ modified in Figure 25: Output Timing.  
Updated Page Program (PP) instructions in Page Programming, Page  
Program (PP), Instruction Times (Device Grade 6) and Instruction Times  
(Device Grade 3).  
01-Aug-2005  
6.0  
48/50