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M25P16-VMN6P 参数 Datasheet PDF下载

M25P16-VMN6P图片预览
型号: M25P16-VMN6P
PDF下载: 下载PDF文件 查看货源
内容描述: 16兆位串行闪存, 75 MHz的SPI总线接口 [16 Mbit, serial Flash memory, 75 MHz SPI bus interface]
分类和应用: 闪存存储内存集成电路光电二极管时钟
文件页数/大小: 55 页 / 1057 K
品牌: NUMONYX [ NUMONYX B.V ]
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Instructions  
M25P16  
Figure 19. Release from Deep Power-down and Read Electronic Signature (RES) instruction  
sequence and data-out sequence  
S
0
1
2
3
4
5
6
7
8
9
10  
28 29 30 31 32 33 34 35 36 37 38  
C
t
Instruction  
3 Dummy bytes  
RES2  
23 22 21  
MSB  
3
2
1
0
D
Q
Electronic Signature Out  
High Impedance  
7
6
5
4
3
2
0
1
MSB  
Deep Power-down mode  
Standby mode  
AI04047C  
1. The value of the 8-bit electronic signature, for the M25P16, is 14h.  
Figure 20. Release from Deep Power-down (RES) instruction sequence  
S
t
RES1  
0
1
2
3
4
5
6
7
C
D
Instruction  
High Impedance  
Q
Deep Power-down mode  
Standby mode  
AI04078B  
Driving Chip Select (S) High after the 8-bit instruction byte has been received by the device, but before  
the whole of the 8-bit electronic signature has been transmitted for the first time (as shown in Figure 20),  
still ensures that the device is put into Standby Power mode. If the device was not previously in the Deep  
Power-down mode, the transition to the Standby Power mode is immediate. If the device was previously  
in the Deep Power-down mode, though, the transition to the Standby Power mode is delayed by t  
,
RES1  
and Chip Select (S) must remain High for at least t  
(max). Once in the Standby Power mode, the  
RES1  
device waits to be selected, so that it can receive, decode and execute instructions.  
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