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M24512-DFMC6TG 参数 Datasheet PDF下载

M24512-DFMC6TG图片预览
型号: M24512-DFMC6TG
PDF下载: 下载PDF文件 查看货源
内容描述: 128兆位,低电压,串行闪存与54 MHz的SPI总线接口 [128-Mbit, low-voltage, serial flash memory with 54-MHz SPI bus interface]
分类和应用: 闪存
文件页数/大小: 47 页 / 905 K
品牌: NUMONYX [ NUMONYX B.V ]
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Description
M25P128
1
Description
The M25P128 is a 128-Mbit (16 Mbit × 8) serial flash memory, with advanced write
protection mechanisms and accessed by a high speed SPI-compatible bus, which allows
clock frequency operation up to 54 MHz
(1)
.
The memory can be programmed 1 to 256 Bytes at a time, using the page program
instruction.
The memory is organized as 64 sectors, each containing 1024 pages. Each page is 256
bytes wide. Thus, the whole memory can be viewed as consisting of 65536 pages, or
16777216 bytes.
An enhanced fast program/erase mode is available to speed up operations in factory
environment. The device enters this mode whenever the V
PPH
voltage is applied to the write
protect/enhanced program supply voltage pin (W/V
PP
).
The whole memory can be erased using the bulk erase instruction, or a sector at a time,
using the sector erase instruction.
In order to meet environmental requirements, Numonyx offers these devices in Lead-free
and RoHS compliant packages.
Note:
Important: this datasheet details the functionality of the M25P128 devices, based on the
previous 130 nm MLC process or based on the current 65 nm SLC process, identified by the
process identification digit ‘A’ in the device marking and process letter "B" in the part
number. The new device is backward compatible with the old one.
Figure 1.
Logic diagram
VCC
D
C
S
W/V
PP
HOLD
M25P128
Q
VSS
AI11313b
1. 54 MHz operation is available only for 65 nm process technology devices, which are identified by the process
identification digit ‘A’ in the device marking and process letter "B" in the part number.
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