Numonyx™ Wireless Flash Memory (W18)
7.0
AC Characteristics
Table 13: Read Operations — 90 nm (Sheet 1 of 2)
VCCQ
=
1.7 V – 1.95 V
#
Symbol
Parameter (1,2)
Unit
Notes
Min
Max
Asynchronous Specifications
R1
tAVAV
tAVQV
tELQV
tGLQV
tPHQV
tELQX
tGLQX
tEHQZ
tGHQZ
tOH
Read Cycle Time
60
-
-
60
60
20
150
-
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
7,8
7,8
7,8
4
R2
Address to Output Valid
CE# Low to Output Valid
OE# Low to Output Valid
RST# High to Output Valid
CE# Low to Output Low-Z
OE# Low to Output Low-Z
CE# High to Output High-Z
OE# High to Output High-Z
CE# (OE#) High to Output Low-Z
CE# Pulse Width High
R3
-
R4
-
R5
-
R6
0
0
-
5
4,5
5
R7
-
R8
14
14
-
R9
-
4,5
4,5
6
R10
R11
R12
R13
0
14
-
tEHEL
tELTV
tEHTZ
-
CE# Low to WAIT Valid
11
11
6
CE# High to WAIT High-Z
-
5,6
Latching Specifications
R101
R102
R103
R104
R105
R106
R108
tAVVH
tELVH
tVLQV
tVLVH
tVHVL
tVHAX
tAPA
Address Setup to ADV# High
CE# Low to ADV# High
7
10
-
-
-
ns
ns
ns
ns
ns
ns
ns
ADV# Low to Output Valid
ADV# Pulse Width Low
60
-
7,8
3
7
ADV# Pulse Width High
7
-
Address Hold from ADV# High
Page Address Access Time
7
-
-
20
Clock Specifications
R200
R201
R202
R203
fCLK
CLK Frequency
-
15
3.5
-
66
-
MHz
ns
tCLK
CLK Period
tCH/L
tCHCL
CLK High or Low Time
CLK Fall or Rise Time
-
ns
3
ns
Datasheet
26
November 2007
Order Number: 290701-18