Numonyx™ Wireless Flash Memory (W18)
6.0
Electrical Specifications
6.1
DC Current Characteristics
Note:
Specifications are for 130 nm and 90 nm devices unless otherwise stated; the 128 Mbit
density is supported ONLY on 90 nm.
Table 11: DC Current Characteristics (Sheet 1 of 2)
VCCQ= 1.8 V
Symbol
Parameter (1)
32/64-Mbit
128-Mbit
Typ Max
Unit
Test Condition
Note
Typ
Max
VCC = VCCMax
VCCQ = VCCQMax
VIN = VCCQ or GND
ILI
Input Load
—
±1
—
±1
µA
µA
8
VCC = VCCMax
VCCQ = VCCQMax
VIN = VCCQ or GND
Output
Leakage
ILO
D[15:0]
—
±1
—
±1
130 nm
ICCS
VCC = VCCMax
VCCQ = VCCQMax
CE# = VCC
8
22
8
50
50
50
50
8
—
8
70
—
VCC Standby
µA
9
90 nm
ICCS
RST# =VCCQ
130 nm
ICCAPS
VCC = VCCMax
VCCQ = VCCQMax
CE# = VSSQ
RST# =VCCQ
All other inputs =VCCQ or VSSQ
70
—
APS
µA
10
3
90 nm
ICCAPS
22
—
Asynchronous
Page Mode
f=13 MHz
3
6
4
7
mA
4 Word Read
6
13
14
18
20
16
18
22
25
17
20
25
30
6
13
14
19
20
16
18
22
25
—
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
Burst length = 4
8
8
Burst length = 8
Synchronous CLK
= 40 MHz
3
3
10
11
7
11
11
7
Burst length =16
Average
VCC Read
ICCR
Burst length = Continuous
Burst length = 4
10
12
13
8
10
12
13
—
—
—
—
Burst length = 8
Synchronous CLK
= 54 MHz
Burst length = 16
Burst length = Continuous
Burst length = 4
11
14
16
—
Burst length = 8
Average
VCC Read
Synchronous CLK
= 66 MHz
ICCR
3, 4
—
Burst length = 16
—
Burst length = Continuous
VPP = VPP1, Program in Progress
18
8
40
15
18
8
40
15
mA
mA
ICCW
VCC Program
4,5,6
4,5,6
VPP = VPP2, Program in Progress
VPP = VPP1, Block Erase in
Progress
18
8
40
15
18
8
40
15
mA
mA
ICCE
VCC Block Erase
VPP = VPP2, Block Erase in
Progress
November 2007
Order Number: 290701-18
Datasheet
23
NUMONYX [ NUMONYX B.V ]
