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JS48F4400P0VB00 参数 Datasheet PDF下载

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型号: JS48F4400P0VB00
PDF下载: 下载PDF文件 查看货源
内容描述: 恒忆的StrataFlash嵌入式存储器 [Numonyx StrataFlash Embedded Memory]
分类和应用: 闪存存储内存集成电路光电二极管
文件页数/大小: 99 页 / 1401 K
品牌: NUMONYX [ NUMONYX B.V ]
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P30  
9.0  
Device Operations  
This section provides an overview of device operations. The system CPU provides  
control of all in-system read, write, and erase operations of the device via the system  
bus. The on-chip Write State Machine (WSM) manages all block-erase and word-  
program algorithms.  
Device commands are written to the Command User Interface (CUI) to control all flash  
memory device operations. The CUI does not occupy an addressable memory location;  
it is the mechanism through which the flash device is controlled.  
9.1  
Bus Operations  
CE# low and RST# high enable device read operations. The device internally decodes  
upper address inputs to determine the accessed block. ADV# low opens the internal  
address latches. OE# low activates the outputs and gates selected data onto the I/O  
bus.  
In asynchronous mode, the address is latched when ADV# goes high or continuously  
flows through if ADV# is held low. In synchronous mode, the address is latched by the  
first of either the rising ADV# edge or the next valid CLK edge with ADV# low (WE#  
and RST# must be VIH; CE# must be VIL).  
Bus cycles to/from the P30 device conform to standard microprocessor bus operations.  
Table 22 summarizes the bus operations and the logic levels that must be applied to  
the device control signal inputs.  
Table 22: Bus Operations Summary  
DQ[15:0  
]
Bus Operation  
RST#  
CLK  
ADV#  
CE#  
OE#  
WE#  
WAIT  
Notes  
Asynchronous  
VIH  
VIH  
VIH  
VIH  
VIH  
VIL  
X
L
L
L
L
L
L
H
H
L
Output  
Output  
Input  
Deasserted  
Driven  
Read  
Write  
Synchronous  
Running  
X
X
X
X
L
L
H
H
X
X
High-Z  
High-Z  
High-Z  
High-Z  
1
2
Output Disable  
Standby  
Reset  
X
X
X
L
H
X
X
High-Z  
High-Z  
High-Z  
H
X
2
2,3  
Notes:  
1.  
Refer to the Table 23, “Command Bus Cycles” on page 45 for valid DQ[15:0] during a write  
operation.  
2.  
3.  
X = Don’t Care (H or L).  
RST# must be at VSS ± 0.2 V to meet the maximum specified power-down current.  
9.1.1  
Reads  
To perform a read operation, RST# and WE# must be deasserted while CE# and OE#  
are asserted. CE# is the device-select control. When asserted, it enables the flash  
memory device. OE# is the data-output control. When asserted, the addressed flash  
memory data is driven onto the I/O bus. See Section 10.0, “Read Operations” on  
page 48 for details on the available read modes, and see Section 14.0, “Special Read  
States” on page 69 for details regarding the available read states.  
November 2007  
Order Number: 306666-11  
Datasheet  
43